在微纳加工技术/超精密制造装备与超高密度磁存储关键工艺取得一些有代表性的工作：
1）7nm node 极紫外(EUV)光刻技术曝光剂研发，7nm Node/13nm 周期 EUV 干涉光刻(IL)工艺,用于 EUV/X-ray 阵列技术的 Si3N4掩模制造工艺；
2）利用 EUVIL 制备出光学方法所能得到的 20nm 最小二维点阵用于下一代的磁记录介质；
3）8/12 英寸下一代 Sub-20nm 自旋转移转矩磁性随机存储芯片 STT-MRAM工艺(与最好的三星工艺技术相媲美)，50nm 分辨率, 1：7.5 全球最高的深宽比结构的 8/12英寸纳米压印装备用于磁传感器阵列工艺；
4）与 GermanLitho/ 天仁微纳科技和 Leuven Instrument 产学研合作，共同开发出专注于磁传感器阵列/MRAM 2/4/6/8 英寸纳米压印专用设备和 8/12 英寸 RIE/IBE 双刻蚀技术磁性材料专属刻蚀装备。
【文章列表】：https://orcid.org/0000-0003-3442-3987 ；https://webofscience.clarivate.cn/wos/author/record/E-3683-2012 ；
2024发表文章26 篇；2023发表文章25 篇；2022发表文章12篇，部分文章如下：
一. 未来芯片材料与器件表征技术：
1）晶圆级存储薄膜材料创制与阵列式高密度器件先进表征技术：【Materials for IC CHIPS】
5. Controlled Synthesis of 2D Ferromagnetic/Antiferromagnetic Cr7Te8/MnTe Vertical Heterostructures for High-Tunable Coercivity, ACS NANO, 2024, DOI: 10.1021/acsnano.4c07128.
4. Zhansheng Gao*, Baojuan Xin, Wei-Hua Wang*, Feng Luo*, et al. Above-room-temperature ferromagnetism in copper-doped two-dimensional chromium-based nanosheets. ACS Nano, 2024, 18, 1, 703–712.
3. Zhang, L#, He, Y.#, Zhou, Z*, Luo, F*, Wu, J.*, et al. Controlled synthesis of a high-mobility Bi3O2.5Se2 semiconductor by oxidation of Bi2Se3 for fast and highly sensitive photodetectors. Laser Photonics & Reviews, 2024, 18: 2300854.
2. Ai, W#, Fu, H. X*, Luo, F*, Deng, M. X.*, Wu, J.*, et al. Observation of giant room-temperature anisotropic magnetoresistance in topological insulator. Nature Communications, 2024, 15, 1259.
1. Shuai Ning, Haoliang Liu, Jinxiong Wu, Feng Luo*, Challenges and opportunities for spintronics based on spin orbit torque, Fundamental Research, 2022, 2, 535.
2）X射线表征与检测分析技术在IC中的应用（EUV光刻胶反应机制与性能评估；掩模缺陷检测与器件无损分析；基于同步辐射的原位时空分辨表征方法学与技术）：【X ray for IC CHIPS】
6. An aluminum-based hybrid film photoresist for advanced lithography by molecular layer deposition，Xingkun Wang, Taoli Guo, Yiyang Shan, Ou Zhang, Hong Dong, *, Jincheng Liu, *, Feng Luo*, Journal of Materials Chemistry C, 2024, Accepted.
5. Heterometallic Ti-Zr Oxo Nanocluster Photoresists for Advanced Lithography，Yang Qiao, Guangyue Shi, Ou Zhang, You Li, Michaela Vockenhuber, Yasin Ekinci, Feng Luo* and Lei Zhang*，SCIENCE CHINA Materials, 2024, Accepted.
4. Additive-assisted Forming High-quality Thin Films of Sn–Oxo Cluster for Nanopatterning, Yingdong Zhao, Xinyan Huang, Youming Si, Lingfeng Zheng, Hao Chen, Jun Zhao, Feng Luo, Jianhua Zhang, Pengzhong Chen, *and Xiaojun Peng *，ACS Applied Materials & Interfaces, 2024, Accepted.
3. Effect of Free Radicals on Irradiation Chemistry of a Double-Coordination Organotin Photoresist by Adjusting Alkyl Ligands, Hao Chen; Yifeng Peng; Haichao Fu; Fuping Han; Guangyue Shi; Feng Luo; Jun Zhao; Danhong Zhou; Pengzhong Chen; Xiaojun Peng CCS Chemistry, DOI: 10.31635/CCSCHEM.024., 202303616, 2024.
2. A novel stable zinc-oxo cluster for advanced lithography patterning, Si, Youming; Zhao, Yingdong; Shi, Guangyue; Zhou, Danhong; Luo, Feng; Chen, Pengzhong; Fan, Jiangli; Peng, Xiaojun, J. Mater. Chem. A, 2023, 11, 4801–4807.
1. Alkenyl-type ligands functionalized tin-lanthanide oxo nanoclusters as molecular lithography resists, Liu, Fang-Fang; Wang, Di; Chen, Guang-Hui; Qiao, Yang; Luo, Feng; Zhang, Jian; Zhang, Lei，Science China Chemistry,Volume 66, pages 1731–1736, (2023).
二. MEMS设计、器件可靠性、晶圆级器件加工与电路系统集成：
1）MEMS设计与晶圆级器件加工：【Manufacturing for IC CHIPS】
3. Cheng, Tong Huai, Luo Feng* et al , Unconventional Transverse Magneto-Optical Kerr Effect in Cobalt Nanopillar Arrays” Advanced Optical Materials, DOI: 10.1002/adom.202303242, 2024, accepted.
2. Cheng,Tong-Huai; Yang,Weihao; Liu,Zhaochao; Feng,HuaYu*; Qin,Jun*; Ma,Yifei; Li,Shicheng; Bi,Lei*; Luo,Feng*; Enhanced Faraday rotation by a Fano resonance in substrate-free three-dimensional magnetoplasmonic structures, Nanoscale,2023,15(38): 15583-15589.
1. Zhang, Z#; Dong, X#; Du, Y.*, Fu, H.*, Luo, F.*,,Wu, J.*,et al. Transferred polymer-encapsulated metal electrodes for electrical transport measurements on ultrathin air-sensitive crystals. Small Methods, 2023, 2300177.
2）模拟IC与可靠性设计：【Design for IC CHIPS】
4. Qiuzhen Xu, Gen Li, Yanyan Liu, Feng Luo *and Zhiming Xiao*A 64-Channel Inverter-Based Neural Signal Recording Amplifier with A Novel Differential-like OTA achieving an NEF of 0.84，IEEE Journal of Solid-State Circuits 2024, Accepted, DOI: 10.1109/JSSC.2024.3363130.
3. A-80dB PSRR 1.166 ppm/°C bandgap voltage reference with improved high-order temperature compensation，Meng, YF IEICE ELECTRONICS EXPRESS，DOI:10.1587/elex.20.20230278，2023.
2. A self-contained self-protected ±70 V voltage-to-current converter with ±0.2% non-linearity, Xiao, ZM*, ELECTRONICS LETTERS, DOI:10.1049/ell2.12550, 2022.
1.An Inverter-Based Amplifier Structure for Neural Signal Recording with an NEF of 1.28 and Area-per-Channel of 0.06mm2，2021 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC)，DOI
10.1109/CICC51472.2021.9431491，2021.
