1. Near-infrared electroluminescence from metal-oxide-semiconductor devices with erbium-doped gadolinium oxide on silicon,
Chunyan Jin, Junqing Liu*, and Jiaming Sun*, Appl. Phys. Lett. 114, 211102 (2019). https://doi.org/10.1063/1.5084016.
2. Growth of ultrathin SnO2 on carbon nanotubes by atomic layer deposition and their application in lithium ion battery anodes, Shengyun Zhu, Junqing Liu*, Jiaming Sun*, Applied Surface Science 484 (2019) 600–609, https://doi.org/10.1016/j.apsusc.2019.04.163.
3. Precise growth of Al2O3/SnO2/CNTs composites by a two-step atomic layer deposition and their application as an improved anode for lithium ion batteries, Shengyun Zhu, Junqing Liu*, Jiaming Sun** ,Electrochimica Acta 319 (2019) 490-498. https://doi.org/10.1016/j.electacta.2019.07.027.
4. Energy transfer under electrical excitation and enhanced electroluminescence in the nanolaminate Yb,Er Co-Doped Al2O3 Films, Yang Yang, Zhongtao Ouyang, Jianzhao Liu, Jiaming Sun, Phys. Status Solidi RRL, (2019), 1900137 (p1-5). https://doi.org/10.1002/pssr.201900137.
5. Effect of Composition, Interface, and Deposition Sequence on Electrical Properties of Nanolayered Ta2O5-Al2O3 Films Grown
on Silicon by Atomic Layer Deposition. Junpeng Li, Jianzhuo Wu, Junqing Liu* and Jiaming Sun*, Nanoscale Research Letters,
14,(2019) 75 (p1-7) , https://doi.org/10.1186/s11671-019-2907-0.
6. Structure and dielectric property of high-k ZrO2 films grown by atomic layer deposition using tetrakis(dimethylamido)zirconium and ozone, Junqing Liu, Junpeng Li, Jianzhuo Wu and Jiaming Sun*, Nanoscale Research Letters 14，(2019) 154（P1-12）. https://doi.org/10.1186/s11671-019-2989-8.
7. Blue electroluminescent Al2O3/Tm2O3 nanolaminate films fabricated by atomic layer depositionon silicon, Yao Liu, Zhongtao Ouyang, Li Yang, Yang Yang and Jiaming Sun, Nanomaterials 9, (2019) 413(1-10).
8. Electroluminescent Yb2O3:Er and Yb2Si2O7:Er nanolaminate films fabricated by atomic layer deposition on silicon, Zhongtao Ouyang, Yang Yang∗, Jiaming Sun∗ Optical Materials 80(2018) 209-215.
9. Near-infrared electroluminescence from atomic layer doped Al2O3:Yb nanolaminate films on silicon, Zhongtao Ouyang, Yang Yang, Jiaming Sun, Scripta Materialia,Scripta Materialia 151, 1 July 2018, P 1-5
10. Intense electroluminescence from Al2O3/Tb2O3 nanolaminate films fabricated by atomic layer deposition on silicon,Yang Yang, Na Li, and Jiaming Sun，Optics Express 26( 7), 2 Apr (2018), 9344-9350.
11.硅基光电子发光材料与器件/杨德仁等著, 撰写章节：第四章，稀土离子掺杂的硅基电致发光器件，P-79-99，北京, 科学出版社, 2016.1，ISBN 978-7-03- 0046179-7
12. Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone, Chunyan Jin, Ben Liu, Zhongxiang Lei and Jiaming Sun* Nanoscale Research Letters 10, 95 p1-9 (2015).
13 Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition, L. Rebohle, M. Braun, R. Wutzler, B. Liu, J.M. Sun, M. Helm, W. Skorupa Appl. Phys. Lett. 104, 251113 (2014).http://dx.doi.org/10.1063/1.4885418
14.Electrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer deposition，
Qiongqiong Hou, Fanjie Meng and Jiaming Sun, Nanoscale Research Letters 8, 144 (2013).
15.Highly efficient silicon light emitting diodes produced by doping engineering,
Jianming Sun, M. Helm, W. Skorupa, B. Schmidt, A. Mücklich, Frontiers of Optoelectronics, 5(1), 7-12(2012).
16.Light emissionfrom ion-implanted silicon, J. M. Sun, M. Helm, W. Skorupa, B. Schmidt, and A. Mücklich,
Phys. Status Solidi C 6 (3), 716-720 (2009).
17.Giant stability enhancement of rare-earth implanted SiO2 light emitting devices by an additional SiON protection layer,
J. M. Sun, L. Rebohle, S. Prucnal, M. Helm, and W. Skorupa, Appl. Phys. Lett. 92, 071103 (2008).
18.Increase of blue electroluminescence from Ce-doped SiO2 layers through sensitization by Gd3+ ions,
J. M. Sun, S. Prucnal, W. Skorupa, M. Helm, L. Rebohle, and T. Gebel, Appl. Phys. Lett. 89, 091908 (2006)
19.Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices,
J. M. Sun, W. Skorupa, T. Dekorsy , and M. Helm, J. Appl. Phys. 97, 123513 (2005).
20.Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal–oxide–semiconductor device,
J. M. Sun, W. Skorupa, T. Dekorsy, and M. Helm, Appl. Phys. Lett. 85, 3387 (2004).
21.Below-band-gap electroluminescence related to doping spikes in boron-implanted silicon pn diodes,
J. M. Sun, T. Dekorsy, W. Skorupa, B. Schmidt, A. Mücklich, and M. Helm, Phys. Rev. B 70, 155316 (2004).
