南开大学吴金雄课题组成立于2019年9月。课题组致力于探索新型电子信息材料在维度效应调控下，其因电子结构改变而产生的新奇的物理性质，并关注构筑高性能晶体管器件的界面问题。课题组成员擅长材料制备及微纳电学手段，目前关注以下几个研究方向：
1.高迁移率及高K二维电子材料的创制；
2. 范德华异质界面的构筑及集成技术；
3. 化学气相沉积（CVD）方法学；
4. 晶圆级单晶薄膜的可控制备。
2005.09-2008.06 江西省余江县第一中学，化学竞赛全国决赛银牌；
2008.09-2012.06 南开大学化学学院化学专业（免试)，获理学学士学位；
2012.09-2017.06 北京大学化学与分子工程学院物理化学专业，获理学博士学位（导师：彭海琳教授、刘忠范院士）；
2017.07-2019.06 北京大学博士后，入选“博新计划”（合作导师：彭海琳教授、张锦院士）
2019.09-至今 南开大学材料科学与工程学院特聘研究员、博士生导师、课题组长。
吴金雄，南开大学本科，北京大学博士和博士后，2019年入职南开大学材料学院，任研究员、博士生导师、课题组长，在晶体管关键电子材料创制及界面调控方面做出了开拓性及特色鲜明的工作。近5年，以通讯作者身份在国际著名期刊Nature Electronics, Nature Communications (3篇) , J. Am. Chem. Soc (2篇), Nano Lett., ACS Nano等上发表论文近20篇，主持国家级青年人才项目（集成电路专项，160万）、基金委重大研究计划（培育，81万)、面上（54万）、南开大学百名青年学术带头人启动经费（A类，200+100万）等项目，参与JKW （50/170万）及科技部重点研发青年项目（75/300万）等，并担任Nature Electronics、Nature Communications等众多顶级期刊审稿人。
奖励与荣誉：
国家级青年人才项目（中组部,集成电路专项，2024）
北京分子科学国家研究中心博士后出站首批特优资助（2019年，50万）
北京大学优秀博士后（2018年）
博士后创新人才支持计划（2017年）
天津市优秀本科毕业论文（2012年）
课题组在读成员：
博士生：陈家彪（2021级，直博），艾威（2022级，硕博），何育彧（2022级，硕博），吕尊贤（2023级）,刘召超(2024级，硕博），侯亚蒙（2024级）
硕士生：陈婉莹（2023级）,杨明健（2023级）,李凌岳（2024级），李文彬（2024级）。
毕业生及去向：
2023届：张哲山（2023年博士毕业，中芯国际）；高战胜（2023年博士毕业，河南大学讲师）;
2024届：张磊（2024年博士毕业，陕西师范大学副教授）；董欣月（2024年博士毕业，西湖大学博士后）;王兵（2024年硕士毕业，本校读博）；徐凌云（2024年硕士毕业，华为）。
课题组实验条件
课题组具备一整套完整的材料生长、微纳加工及表征手段，包括高端化学气相沉积系统、半导体参数测试仪-探针台、高低温真空探针台、热蒸镀、磁控溅射、电子束蒸镀、原子层沉积、聚焦离子束电子束双束系统（FIB/EBL, FEI helios 5 CX）、激光直写光刻、原子力显微镜（Bruker icon）、无液氦综合物性测量系统（PPMS Dynacool 9T）等大型仪器设备。 课题组研究条件优渥，学生无需出课题组即可完成材料生长、微纳加工及低温电磁输运测量一整套流程，且所有大型仪器均自己亲自操作。
28. He, Y.; Wu, J*, et al. Sacrifice-layer-free transfer of wafer-scale atomic-layer-deposited dielectrics and full-device stacks for two-dimensional electronics, Nature Communications, 2025, 16, 5904.
27. Liu, Z.; Luo, F*; Wu, J.*, et al. Wafer-scale evaporated metallic BiOx as contact electrodes of MoS2 transistors with enhanced thermal stability. Chemistry of Materials, 2025, in press.
26. Zhang, L .; Wu, J.* , et al. Vertically grown metal nanosheets integrated with atomic-layer-deposited dielectrics for transistors with sub-nanometre capacitance-equivalent thicknesses. Nature Electronics, 2024, 7, 662-670.
25. Dong, X.; Wu, J.* ; Fu, H.*. Bi3O2.5Se2:A Two-Dimensional High-Mobility Polar Semiconductor with Large Interlayer and Interfacial Charge Transfer, Nanoscale, 2024, 16, 14766–14774.
24. Li, Y.#; Li J.#; Ai, W.#, Wu, J.*; Cheng, F.*; Wang, H.*, et al. Sequentially regulating potential-determining step for lowering CO2 electroreduction overpotential over Te-doped Bi nanotips, Angew. Chem. Int. Ed, 2024, 63, 36, e202407772.
23. Chen, J.; Wu, J.* , et al. Controlled synthesis of ultrathin Bi2Ge(Si)O5 dielectric alloys with composition-tunable high-κ properties. J. Am. Chem. Soc. 2024, 146, 16, 11523–11531 .
22. Meng, K#.; Huang, J.*; Wu, J.*; Yuan H.*, et al. Gate-tunable Berry curvature in van der Waals Itinerant Ferromagnetic Cr7Te8. InfoMat, 2024, e12524.
21. Dong, X; Wu, J.*; Fu, H.*, Yan, B.*, et al. Exploring the high dielectric performance of Bi2SeO5: from bulk to bilayer and monolayer. Science China Materials, 2024, doi.org/10.1007/s40843-023-2737-8.
20. Ai, W#, Fu, H. X*, Luo, F*, Deng, M. X.*, Wu, J.*, et al. Observation of giant room-temperature anisotropic magnetoresistance in the topological insulator beta-Ag2Te. Nature Communications, 2024, 15:1259 .
19. Zhang, L#, He, Y.#, Zhou, Z*, Luo, F*, Wu, J.*, et al. Controlled synthesis of a high-mobility Bi3O2.5Se2 semiconductor by oxidation of Bi2Se3 for fast and highly sensitive photodetectors. Laser Photonics & Reviews, 2024, 18: 2300854 .
18. Chen, J., Wu, J.*, et al. Vertically grown ultrathin Bi2SiO5 as high-κ single-crystalline gate dielectric. Nature Communications, 2023, 14, 4406 (Feature article).
17. He, Y., Zhou, Z.*, Wu, J.*, et al. The discovery of a high-mobility two-dimensional bismuth oxyselenide semiconductor and its application in nonvolatile neuromophic devices. ACS Nano, 2023, 17, 10783
16. Zhang, Z#; Dong, X#; Du, Y.*, Fu, H.*, Luo, F.*,,Wu, J.*,et al. Transferred polymer-encapsulated metal electrodes for electrical transport measurements on ultrathin air-sensitive crystals. Small Methods, 2023, 2300177.
15. Zhang, L#; Fu. X.*; Yuan H.*,Wu, J.*,et al. Temperature-driven reversible structural transformation and conductivity switching in ultrathin Cu9S5 crystals. Nano Res., 2023, 16,10515.
14. Ai, W.; Wu, J.*, et al. High mobility and quantum oscillations in semiconducting Bi2O2Te nanosheets grown by chemical vapor deposition. Nano Letters, 2022, 18, 7659 .
13. Gao, Z.; Wu, J.*; Luo, F.*, et al. Large and Tunable Magnetoresistance in Cr1-xTe/Al2O3/Cr1-xTe Vertical Spin Valve Device. Adv. Electron. Mater., 2022, 9, 2200823.
12. Zhang, Z#; Dong, X#; Fu, H.*; Du, Y.*,Wu, J.*,et al. Ferromagnetic Order in Semiconducting Cr-doped a-MnTe Nanosheets Grown by Chemical Vapor Deposition. Adv. Electron. Mater., 2022:2200451.
11. Gao, Z.; Yuan, H.*; Wu, J.*; Luo, F.*, et al. Near room-temperature ferromagnetism in air-stable two-dimensional Cr1-xTe grown by chemical vapor deposition. Nano Res., 2022, 15,3763.
10. Zhang, C.;Wu, J.*; Peng, H.*, et al. High-mobility flexible oxyselenide thin-film transistors prepared by solution- assisted method. J. Am. Chem. Soc., 2020, 142, 6, 2726.
9. Wu, J.; Peng, H.*, et al. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se. Nature Nanotechnology, 2017,12, 530.
8. Chen, C. #; Wang, M. #; Wu, J. #, Peng, H.*, Chen, Y. L.*,et al. Electronic Structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se. Science Advances, 2018, 4, eaat8355 (Co-first author).
7. Yin, J. #; Tan Z. #; Hong H. #; Wu, J. #, Liu, K.*, Peng, H.*, et al. Ultrafast, highly-sensitive infrared photodetectors based on two-dimensional Bi2O2Se crystal. Nature Communications, 2018, 9, 3311 (Co-first author).
6.Wu, J.; Peng, H.*, et al. Chemical patterning of high-mobility semiconducting 2D Bi2O2Se crystals for integrated optoelectronic devices. Advanced Materials, 2017, 29, 1704060.
5. Wu, J.; Peng, H. *, et al. Controlled synthesis of high-mobility atomically thin bismuth oxyselenide crystals. Nano Letters, 2017, 17, 3021.
4. Wu, J.; Peng, H.*, et al. Low residual carrier concentration and high mobility in 2D semiconducting Bi2O2Se, Nano Letters, 2019, 19, 197.
3. Fu, H#.; Wu, J.#, et al. Self-modulation doping effect in the high-mobility layered semiconductor Bi2O2Se. Physical Review B, 2018, 97, 241203 (Co-first author).
2. Wu, J.; Liu, Z.*; Peng, H.*, Fluorescence quenching effect of rhodanmine 6G on two-dimensional Bi2Se3 crystals. Acta Chimica Sinica, 2015, 73, 944.
1. Wu, J.; Li, N.*, et al. Fluorine-free crystallization of triclinic AlPO4-34. Crysengcomm, 2012,14, 8671.