研究方向

        半导体光电子学薄膜材料与器件,复合纳米光电子功能材料与器件。涉及III-V族、II-V族半导体材料、硅基发光材料,稀土发光材料、high-K微电子介质材料和储能材料,宽禁带透明导电材料、自旋电子学材料。长期从事分子束外延、MOCVD半导体材料外延生长和原子层沉积、PECVD、电子束蒸发、磁控溅射和薄膜沉积技术研究工作。近年来致力于以原子层为单位的数字化材料合成技术和新型纳米薄膜光电子器件研制工作。

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代表性成果
  1. Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone, Chunyan Jin, Ben Liu, Zhongxiang Lei and Jiaming Sun, Nanoscale Research Letters 10 (95), 1-9 (2015).
  2. Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition,  L. Rebohle, M. Braun, R. Wutzler, B. Liu, J.M. Sun, M. Helm, W. Skorupa Appl. Phys. Lett. 104, 251113 (2014).  
  3. Electrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer deposition, Qiongqiong Hou, Fanjie Meng and Jiaming Sun, Nanoscale Research Letters 8, 144 (2013).
  4. Highly efficient silicon light emitting diodes produced by doping engineering, Jianming Sun, M. Helm, W. Skorupa, B. Schmidt, A. Mücklich, Frontiers of Optoelectronics, 5(1), 7-12(2012).
  5. Light emissionfrom ion-implanted silicon, J. M. Sun, M. Helm, W. Skorupa, B. Schmidt, and A. Mücklich, Phys. Status Solidi C 6 (3), 716-720 (2009).
  6. Giant stability enhancement of rare-earth implanted SiO2 light emitting devices by an additional SiON protection layer, J. M. Sun, L. Rebohle, S. Prucnal, M. Helm, and W. Skorupa, Appl. Phys. Lett. 92, 071103 (2008).
  7. Increase of blue electroluminescence from Ce-doped SiO2 layers through sensitization by Gd3+ ions, J. M. Sun, S. Prucnal, W. Skorupa, M. Helm, L. Rebohle, and T. Gebel, Appl. Phys. Lett. 89, 091908 (2006)
  8. Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices, J. M. Sun, W. Skorupa, T. Dekorsy , and M. Helm, J. Appl. Phys. 97, 123513 (2005).
  9. Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal–oxide–semiconductor device, J. M. Sun, W. Skorupa, T. Dekorsy, and M. Helm, Appl. Phys. Lett. 85, 3387 (2004).
  10. Below-band-gap electroluminescence related to doping spikes in boron-implanted silicon pn diodes, J. M. Sun, T. Dekorsy, W. Skorupa, B. Schmidt, A. Mücklich, and M. Helm, Phys. Rev. B 70, 155316 (2004).